TSV deep trench capacitor and anti-fuse structure

ABSTRACT

A through-silicon-via (TSV) structure is formed within a trench located within a semiconductor structure. The TSV structure may include a first electrically conductive liner layer located on an outer surface of the trench and a first electrically conductive structure located on the first electrically conductive liner layer, whereby the first electrically conductive structure partially fills the trench. A second electrically conductive liner layer is located on the first electrically conductive structure, a dielectric layer is located on the second electrically conductive liner layer, while a third electrically conductive liner layer is located on the dielectric layer. A second electrically conductive structure is located on the third electrically conductive liner layer, whereby the second electrically conductive structure fills a remaining opening of the trench.

BACKGROUND

a. Field of the Invention

The present invention generally relates to semiconductor devices, and particularly to semiconductor through-silicon-via (TSV) structures.

b. Background of Invention

TSVs may, among other things, be used to provide an electrical connection from one semiconductor chip to another semiconductor chip in a three-dimensional (3D) integration. Within a semiconductor chip, a conventional TSV structure may typically involve forming a trench, creating a liner over the walls of the trench, and subsequently filling the lined trench, for example, entirely with copper (Cu). Other device structures such as fuses, anti-fuses, resistors, and capacitors are normally located away from the formed TSV in, for example, a back-end-of-the-line (BEOL) region of the semiconductor chip.

BRIEF SUMMARY

Accordingly, it may, among other things, be advantageous to form device structures (e.g., capacitors, anti-fuses) within one or more TSV structures fabricated within a semiconductor chip.

According to at least one exemplary embodiment, a through-silicon-via (TSV) structure formed within a trench located within a semiconductor structure is provided. The TSV structure may include a first electrically conductive liner layer located on an outer surface of the trench, a first electrically conductive structure located on the first electrically conductive liner layer such that the first electrically conductive structure partially filling the trench, a second electrically conductive liner layer located on the first electrically conductive structure, a dielectric layer located on the second electrically conductive liner layer, a third electrically conductive liner layer located on the dielectric layer, and a second electrically conductive structure located on the third electrically conductive liner layer and filling a remaining opening of the trench.

According to at least one other exemplary embodiment, a method of forming a through-silicon-via (TSV) within a trench of a semiconductor structure is provided. The method may include forming a first electrically conductive liner layer on an outer surface of the trench, forming a first electrically conductive structure on the first electrically conductive liner layer for partially filling the trench, forming a second electrically conductive liner layer on the first electrically conductive structure, forming a dielectric layer on the second electrically conductive liner layer, forming a third electrically conductive liner layer on the dielectric layer, and forming a second electrically conductive structure on the third electrically conductive liner layer for filling a remaining opening of the trench.

According to at least one other exemplary embodiment, a design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, is provided. The design structure may include a first electrically conductive liner layer located on an outer surface of the trench, a first electrically conductive structure located on the first electrically conductive liner layer such that the first electrically conductive structure partially filling the trench, a second electrically conductive liner layer located on the first electrically conductive structure, a dielectric layer located on the second electrically conductive liner layer, a third electrically conductive liner layer located on the dielectric layer, and a second electrically conductive structure located on the third electrically conductive liner layer and filling a remaining opening of the trench.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIGS. 1A and 1B illustrate the formation of TSV trench structures in a semiconductor structure according to one embodiment;

FIGS. 2A and 2B illustrate the formation of an oxide layer within the TSV trench structures depicted in FIGS. 1A and 1B according to one embodiment;

FIG. 2C illustrates a plan view of exemplary trench openings that may be formed according to different embodiments;

FIGS. 3A and 3B illustrate the formation of a copper fill region within the TSV trench structures depicted in FIGS. 2A and 2B according to one embodiment;

FIGS. 4A and 4B illustrate the formation of metal-insulator-metal region within the TSV trench structures depicted in FIGS. 3A and 3B according to one embodiment;

FIGS. 5A and 5B illustrate the removal of the metal and insulator region from the TSV trench structure depicted in FIG. 4A according to one embodiment;

FIGS. 6A and 6B illustrate the deposition of a copper/manganese liner within the TSV trench structures depicted in FIGS. 5A and 5B according to one embodiment;

FIGS. 7A and 7B illustrate the deposition of another copper fill region within the TSV trench structures depicted in FIGS. 6A and 6B in order to form a conventional TSV structure (FIG. 7A) and a TSV deep trench capacitor or anti-fuse (FIG. 7B) according to one embodiment;

FIG. 8 depicts a formed TSV deep trench capacitor structure according to one embodiment;

FIG. 9 depicts formed TSV deep trench capacitor structures having different capacitance values according to one embodiment;

FIG. 10 depicts a formed conventional TSV structure and TSV deep trench capacitor structures having different capacitance values according to another embodiment;

FIG. 11 depicts formed TSV anti-fuse structures having different programming conditions according to one embodiment; and

FIG. 12 is a flow diagram of a design process used in semiconductor design, manufacture, and/or test.

The drawings are not necessarily to scale. The drawings are merely schematic representations, not intended to portray specific parameters of the invention. The drawings are intended to depict only typical embodiments of the invention. In the drawings, like numbering represents like elements.

DETAILED DESCRIPTION

The following described exemplary embodiments are directed to forming capacitors and/or anti-fuse devices during the formation of TSV structures used in, for example, a 3D integration.

FIG. 1A is a cross-sectional view that refers to the photolithographic patterning of a region 100 a of a semiconductor structure 100 in order to form a TSV structure. FIG. 1B is a cross-sectional view that refers to the photolithographic patterning of another region 100 b of the semiconductor structure 100 in order to form a metal-insulator-metal (MIM) capacitor or anti-fuse device during the formation of another TSV structure.

As depicted, the photolithographic process illustrated in both FIGS. 1A and 1B are substantially identical and may be part of the same photolithographic process. Referring to FIG. 1A, the cross-sectional view of region 100 a shows a patterned photoresist layer 104 a formed over back-end-of-the-line (BEOL) region 106 a. The BEOL region 106 a may, for example, include metal layers 108 a-108 c. Each of the metal layers 108 a-108 c may, for example, include a metal structure, an interlayer dielectric (ILD) layer and a silicon nitride cap layer. Accordingly, metal layer 108 a may include metal structure 110 a, ILD layer 112 a, and silicon nitride cap layer 114 a, while metal layer 108 b may include metal structure 110 b, ILD layer 112 b, and silicon nitride cap layer 114 b. Also, metal layer 108 c may include metal structure 110 c, ILD layer 112 c, and silicon nitride cap layer 114 c. The metal layers 108 a-108 c forming the BEOL region 106 a are formed over a front-end-of-the-line (FEOL) region 116 created from substrate region 118. As depicted, metal layers 108 a-108 c are electrically coupled by via connections V₁-V₃. The substrate region 118 may include a silicon-on-insulator structure, a bulk semiconductor structure, or any other suitable structure (e.g., including III-V materials) utilized for manufacturing integrated circuit devices. The devices (e.g., nFET, pFET, etc.) formed within the FEOL region 116 may be electrically interconnected by the BEOL region 106 a metal layers 108 a-108 c.

Similarly, referring to FIG. 1B, the cross-sectional view of region 100 b shows a patterned photoresist layer 104 b formed over back-end-of-the-line (BEOL) region 106 b. The BEOL region 106 b may, for example, include metal layers 118 a-118 c. Each of the metal layers 118 a-118 c may, for example, include a metal structure, an interlayer dielectric (ILD) layer and a silicon nitride cap layer. Accordingly, metal layer 118 a may include metal structure 120 a, ILD layer 122 a, and silicon nitride cap layer 124 a, while metal layer 118 b may include metal structure 120 b, ILD layer 122 b, and silicon nitride cap layer 124 b. Also, metal layer 118 c may include metal structure 120 c, ILD layer 122 c, and silicon nitride cap layer 124 c. The metal layers 118 a-118 c forming the BEOL region 106 b are formed over a front-end-of-the-line (FEOL) region 126 created from substrate region 128. As depicted, metal layers 118 a-118 c are electrically coupled by via connections V′₁-V′₃. The substrate region 128 may include a silicon-on-insulator structure, a bulk semiconductor structure, or any other suitable substrate structure (e.g., including III-V materials) utilized for manufacturing integrated circuit devices. The devices (e.g., nFET, pFET, etc.) formed within the FEOL region 126 may be electrically interconnected by the BEOL region 106 b metal layers 118 a-118 c.

As depicted by FIG. 1A, an opening 125 a created by the patterned photoresist layer 104 a facilitates the creation of a TSV structure in subsequent processes. Likewise, as depicted by FIG. 1B, an opening 125 b created by the patterned photoresist layer 104 b subsequently facilitates the creation of a metal-insulator-metal (MIM) capacitor or anti-fuse device within a TSV trench structure. The diameter of the created openings 125 a, 125 b (FIGS. 1A and 1B) may be about 5-20 μm, although larger or smaller diameters may also be contemplated.

Referring to FIG. 2A, the cross-sectional view of region 100 a shows the forming of a TSV trench structure 202 a within semiconductor structure 100. This trench structure 202 a may be formed by, for example, a reactive ion etching (RIE) process. Similarly, referring to FIG. 2B, the cross-sectional view of region 100 b shows the forming of another TSV trench structure 202 b within semiconductor structure 100. This trench structure 202 b may also be formed by the reactive ion etching (RIE) process utilized for creating trench structure 202 a. Following the formation of trenches 202 a and 202 b, the patterned photoresist layers 104 a, 104 b (FIGS. 1A and 1B) may be removed. Remaining residue (e.g., polymer residue) may then be removed using, for example, a dilute hydrofluoric acid (DHF) clean process. Trenches 202 a and 202 b may, for example, have a depth of about 5 μm-100 μm.

Further referring to FIG. 2A, an oxide layer 204 a (e.g., silicon dioxide) may be deposited both within the trench structure 202 a and the top surface S_(a) surrounding the trench 202 a. The thickness of the oxide layer 204 a (e.g., silicon dioxide) on the top surface S_(a) surrounding the trench 202 a may be about 2000 Å-4000 Å, while the thickness of the oxide layer 204 a (e.g., silicon dioxide) on the sidewalls SW_(a) of the trench 202 a may be about 1000 Å-2000 Å.

Similarly, referring to FIG. 2B, an oxide layer 204 b (e.g., silicon dioxide) may also be deposited both within the trench structure 202 b and the top surface S_(b) surrounding the trench 202 b. The thickness of the oxide layer 204 b (e.g., silicon dioxide) on the top surface S_(b) surrounding the trench 202 b may be about 2000 Å-4000 Å, while the thickness of the oxide layer 104 b (e.g., silicon dioxide) on the sidewalls SW_(b) of the trench 202 b may be about 1000 Å-2000 Å. The deposition of the oxide insulator layers 204 a, 204 b may be carried out using, for example, a sub-atomic chemical vapor deposition (SACVD) process or a plasma enhanced chemical vapor deposition (PECVD) process.

FIG. 2C depicts a plan view 220 of the formed trenches 202 a, 202 b shown in FIGS. 2A and 2B. The processes and structures depicted in the subsequent figures (i.e., FIGS. 3-11), assume such exemplary trench 202 a, 202 b profiles. However, as further illustrated in FIG. 2C, an alternative plan view 240 of a formed trench is shown. According to another exemplary embodiment, the trench 240 may be formed as an annular TSV, whereby the trench opening has an annulus or doughnut shape, as depicted by region 250. The remaining region, as indicated by 245, is constructed from the semiconductor material of the BEOL region. It may be appreciated that, in alternative embodiments, the processes and structures illustrated and described in relation to the depicted figures may also be applied to the alternative trench 240 depicted in FIG. 2C.

Referring to FIG. 3A, the cross-sectional view of region 100 a shows the deposition of a tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 a over both the oxide layer 204 a (e.g., silicon dioxide) located on the sidewalls SW_(a) of the trench structure 202 a, and over the oxide layer 204 a (e.g., silicon dioxide) located above the top surface S_(a) surrounding the trench 202 a. The thickness of the TaN liner within the tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 a may be in the region of about 200 Å-300 Å. According to one implementation, the thickness of the TaN liner within tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 a may be in the region of about 250 Å, although thicknesses of greater or lesser values may also be contemplated. The thickness of the Ta liner within the tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 a may be in the region of about 400 Å-600 Å. According to one implementation, the thickness of the Ta liner within tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 a may be in the region of about 500 Å, although thicknesses of greater or lesser values may also be contemplated. Thus, the total thickness of the TaN/Ta liner 302 a may be about 600 Å-900 Å. The deposited tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 a may serve to inhibit the diffusion of subsequently filled copper within the trench 202 a into the BEOL region 316 a. Such a copper diffusion may cause electrical shorts within the BEOL electrical connections. Moreover, the deposited tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 a may serve to inhibit the diffusion of subsequently filled copper within the trench 202 a into the FEOL region 326 a. Such a copper diffusion may impair device (e.g., FET devices) operation within the FEOL region located adjacent the trench structure 202 a.

Similarly, referring to FIG. 3B, the cross-sectional view of region 100 b shows the deposition of a tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 b over both the oxide layer 204 b (e.g., silicon dioxide) located on the sidewalls SW_(b) of the trench structure 202 b, and over the oxide layer 204 a (e.g., silicon dioxide) located above the top surface S_(b) surrounding the trench 202 b. The thickness of the TaN liner within the tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 b may be in the region of about 200 Å-300 Å. According to one implementation, the thickness of the TaN liner within tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 b may be in the region of about 250 Å, although thicknesses of greater or lesser values may also be contemplated. The thickness of the Ta liner within the tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 b may be in the region of about 400 Å-600 Å. According to one implementation, the thickness of the Ta liner within tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 b may be in the region of about 500 Å, although thicknesses of greater or lesser values may also be contemplated. Thus, the total thickness of the TaN/Ta liner 302 b may be about 600 Å-900 Å. The deposited tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 a may serve to inhibit the diffusion of subsequently filled copper within the trench 202 b into the BEOL region 316 b. Such a copper diffusion may cause electrical shorts within the BEOL electrical connections. Moreover, the deposited tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 b may serve to inhibit the diffusion of subsequently filled copper within the trench 202 b into the FEOL region 326 b. Such a copper diffusion may impair device operation within the FEOL region located adjacent the trench structure 202 b.

Referring back to FIG. 3A, a copper (Cu) and manganese (Mn) liner 304 a (i.e., a seed layer) is deposited over both the tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 a located within the trench structure 202 a, and the tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 a surrounding the trench 202 a. The copper (Cu) and manganese (Mn) liner 304 a (i.e., a seed layer) may have a thickness in the range of about 6,000 Å-10,000 Å. According to one implementation, the thickness of the copper (Cu) and manganese (Mn) liner 304 a may be about 8000 Å.

Similarly, referring back to FIG. 3B, a copper (Cu) and manganese (Mn) liner 304 b (i.e., a seed layer) is deposited over both the tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 b located within trench structure 202 b, and the tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 b surrounding the trench 202 b. Copper (Cu) and manganese (Mn) liner 304 b (i.e., a seed layer) may also have a thickness in the range of about 6,000 Å-10,000 Å. According to one implementation, the thickness of the copper (Cu) and manganese (Mn) liner 304 a may also be about 8000 Å.

As further depicted in FIG. 3A, a copper fill 306 a is introduced within the trench 202 a using a bottom-up electroplating process. Similarly, further referring to FIG. 3B, a copper fill 306 b is also introduced within the trench 202 b using bottom-up electroplating. The mixture of copper and manganese within liners 304 a and 304 b, among other things, mitigates electromigration. As illustrated, some of the copper fill 306 a is deposited within the sidewalls of the trench 202 a over the copper and manganese liner 304 a (i.e., depicted within dashed lines), while some copper fill 306 a also accumulates over the copper and manganese liner 304 a surrounding the trench 202 a. Similarly, some of copper fill 306 b is deposited within the sidewalls of trench 202 b over the copper and manganese liner 304 b (i.e., depicted within dashed lines), while some of the copper fill 306 b also accumulates over the copper and manganese liner 304 b surrounding the trench 202 b.

Referring to FIG. 4A, the cross-sectional view of region 100 a shows the deposition of another tantalum nitride (TaN) and tantalum (Ta) metallization liner 402 a. More specifically, the tantalum nitride (TaN) and tantalum (Ta) metallization liner 402 a is deposited over the copper (Cu) and manganese (Mn) liner 304 a located within the trench 202 a, over the copper (Cu) and manganese (Mn) liner 304 a outside trench 202 a, and over the top surface S_(T) of the copper fill 306 a.

Similarly, referring to FIG. 4B, the cross-sectional view of region 100 b shows the deposition of tantalum nitride (TaN) and tantalum (Ta) metallization liner 402 b. More specifically, the tantalum nitride (TaN) and tantalum (Ta) metallization liner 402 b is deposited over the copper (Cu) and manganese (Mn) liner 304 b located within the trench 202 b, over the copper (Cu) and manganese (Mn) liner 304 b outside trench 202 b, and over the top surface S′_(T) of copper fill 306 b.

Further referring to FIG. 4A, the cross-sectional view of region 100 a shows the deposition of a dielectric layer 406 a (i.e., insulator deposition) such as, for example, silicon dioxide (SiO₂) or other higher k materials. The dielectric layer 406 a may include a thickness of about 100 Å-1000 Å, although greater or lesser thicknesses may be contemplated based on component application (e.g., capacitor or anti-fuse). More specifically, the dielectric layer 406 a is deposited over the tantalum nitride (TaN) and tantalum (Ta) metallization liner 402 a located within the trench 202 a, and over the tantalum nitride (TaN) and tantalum (Ta) metallization liner 402 a outside trench 202 a.

Similarly, further referring to FIG. 4B, the cross-sectional view of region 100 b shows the deposition of a dielectric layer 406 b (i.e., insulator deposition) such as, for example, silicon dioxide (SiO₂) or other higher k materials. The dielectric layer 406 b may also include a thickness of about 100 Å-1000 Å, although greater or lesser thicknesses may be contemplated based on component application (e.g., capacitor or anti-fuse). More specifically, the dielectric layer 406 b is deposited over the tantalum nitride (TaN) and tantalum (Ta) metallization liner 402 b located within the trench 202 b, and over the tantalum nitride (TaN) and tantalum (Ta) metallization liner 402 b outside trench 202 b.

Still referring to FIG. 4A, the cross-sectional view of region 100 a shows the deposition of yet another tantalum nitride (TaN) and tantalum (Ta) metallization liner 410 a. More specifically, the tantalum nitride (TaN) and tantalum (Ta) metallization liner 410 a is deposited over the dielectric layer 406 a located within the trench 202 a, and over the dielectric layer 406 a outside trench 202 a. Similarly, referring to FIG. 4B, the cross-sectional view of region 100 b also shows the deposition of yet another tantalum nitride (TaN) and tantalum (Ta) metallization liner 410 b. More specifically, the tantalum nitride (TaN) and tantalum (Ta) metallization liner 410 b is also deposited over the dielectric layer 406 b located within trench 202 b, and over the dielectric layer 406 b outside trench 202 b.

As shown in FIG. 4A, the depicted tantalum nitride (TaN) and tantalum (Ta) metallization liner 402 a that is separated by dielectric layer 406 a from tantalum nitride (TaN) and tantalum (Ta) metallization liners 410 a, forms a metal-insulator-metal (MIM) structure used in the subsequent formation of a capacitor or an anti-fuse device. Similarly, as shown in FIG. 4B, the depicted tantalum nitride (TaN) and tantalum (Ta) metallization liner 402 b that is separated by dielectric layer 406 b from tantalum nitride (TaN) and tantalum (Ta) metallization liner 410 b, may also form a metal-insulator-metal (MIM) structure used in the subsequent formation of a capacitor or an anti-fuse device. As previously described, the thickness of the TaN liner within the tantalum nitride (TaN) and tantalum (Ta) metallization liners 402 a, 410 a, 402 b, 410 b may be in the region of about 200 Å-300 Å. According to one implementation, the thickness of the TaN liners within the tantalum nitride (TaN) and tantalum (Ta) metallization liners 402 a, 410 a, 402 b, 410 b may be in the region of about 250 Å, although thicknesses of greater or lesser values may also be contemplated. The thickness of the Ta liners within the tantalum nitride (TaN) and tantalum (Ta) metallization liners 402 a, 410 a, 402 b, 410 b may be in the region of about 400 Å-600 Å. According to one implementation, the thickness of the Ta liner within the tantalum nitride (TaN) and tantalum (Ta) metallization liners 402 a, 410 a, 402 b, 410 b may be in the region of about 500 Å, although thicknesses of greater or lesser values may also be contemplated. Thus, the total thickness of TaN/Ta liners 402 a, 410 a, 402 b, and 410 b may each be about 600 Å-900 Å. Also, as previously described, the dielectric layer 406 b may include a thickness of about 100 Å-1000 Å. For example, in some implementations, the dielectric layer 406 b may be about 500 Å thick, while in other implementations the dielectric layer 406 b may have a thickness of about 100 Å.

Referring to FIG. 5A, the cross-sectional view of region 100 a shows the removal (e.g., via a RIE etch) of the tantalum nitride (TaN) and tantalum (Ta) metallization liner 410 a (FIG. 4A), and the removal of dielectric layer 406 a (FIG. 4A). However, as depicted in FIG. 5B, patterned photoresist layer 502 preserves both the tantalum nitride (TaN) and tantalum (Ta) metallization liner 410 b within region 100 b, and the dielectric layer 406 b within region 100 b, during the region 100 a etching of liner 410 a (FIG. 4A) and dielectric layer 406 a (FIG. 4A). Thus, since the structure corresponding to region 100 a may be subsequently used to form a conventional TSV structure, liner 410 a and dielectric layer 406 a is accordingly removed. However, because the structure corresponding to region 100 b may be subsequently used to form a device (e.g., capacitor or anti-fuse) during the TSV structure formation process, liner 410 b and dielectric layer 406 b is accordingly preserved. More specifically, for example, the liner 410 b may form part of the top plate of a capacitor created within trench 202 b of region 100 b, while the dielectric layer 406 b forms the dielectric utilized to electrically insulate the top plate (subsequently formed) from the bottom plate of the capacitor. The bottom plate may include the formed tantalum nitride (TaN) and tantalum (Ta) metallization liner 302 b, the copper (Cu) and manganese (Mn) liner 304 b, the copper fill 306 b, and tantalum nitride (TaN)/tantalum (Ta) metallization liner 402 b.

Referring to FIG. 6A, the cross-sectional view of region 100 a shows the deposition of the copper (Cu) and manganese (Mn) liner 604 a. More specifically, the copper (Cu) and manganese (Mn) liner 604 a is deposited over the tantalum nitride (TaN) and tantalum (Ta) metallization liner 402 a located within trench 202 a, and over the tantalum nitride (TaN) and tantalum (Ta) metallization liner 402 a outside trench 202 a. As previously described, the copper (Cu) and manganese (Mn) liner 604 a (i.e., a seed layer) may also have a thickness in the range of about 6000 Å-10000 Å. According to one implementation, the thickness of the copper (Cu) and manganese (Mn) liner 604 a may also be about 8000 Å.

Referring to FIG. 6B, the cross-sectional view of region 100 b depicts that upon the removal (e.g., a dry or wet etch) of patterned resist layer 502 (FIG. 5B), copper (Cu) and manganese (Mn) liner 604 b is deposited over the tantalum nitride (TaN) and tantalum (Ta) metallization liner 410 b located within trench 202 b, and over the partial tantalum nitride (TaN) and tantalum (Ta) metallization liner 410 b located outside trench 202 b. Also, the copper (Cu) and manganese (Mn) liner 604 b (i.e., a seed layer) may also have a thickness in the range of about 6000 Å-10000 Å. According to one implementation, the thickness of the copper (Cu) and manganese (Mn) liner 604 b may also be about 8000 Å.

Referring to FIG. 7A, a copper fill 706 a is introduced within the trench 202 a using a bottom-up electroplating process. Similarly, referring to FIG. 7B, a copper fill 706 b is also introduced within the trench 202 b using bottom-up electroplating. As depicted in FIGS. 7A and 7B, copper fill 706 a within trench 202 a is formed over the deposited copper (Cu) and manganese (Mn) liner 604 a, while copper fill 706 b within trench 202 b is formed over the deposited copper (Cu) and manganese (Mn) liner 604 b. Accordingly, the formed TSV structure of region 100 a provides an electrically conductive connection between the opposing surfaces A and B of semiconductor structure 100. However, concurrently with the formation of the TSV structure of region 100 a, a deep trench capacitor or anti-fuse structure may be formed in region 100 b between opposing surfaces A′ and B′ of semiconductor structure 100. As illustrated, some of the copper fill 706 a is deposited within the sidewalls of the trench 202 a over the copper and manganese liner 604 a (i.e., depicted within dashed lines), while some copper fill 706 a also accumulates (not shown) over the copper and manganese liner 604 a surrounding the trench 202 a. Similarly, some of copper fill 706 b is deposited within the sidewalls of trench 202 b over the copper and manganese liner 604 b (i.e., depicted within dashed lines), while some of the copper fill 706 b also accumulates (also not shown) over the copper and manganese liner 304 b surrounding the trench 202 b.

Referring to FIG. 8, a deep trench capacitor structure 800 may be formed using the processes described above in relation to FIGS. 1-8. Within a single substantially vertical trench 202 b, the deep trench capacitor 800 includes a bottom plate formed by TaN/Ta metallization liner 302 b, Cu/Mn liner 304 b, copper fill region 306 b, and TaN/Ta metallization liner 402 b. Within the single substantially vertical trench 202 b, the deep trench capacitor 800 also includes a top plate formed by TaN/Ta metallization liner 410 b, Cu/Mn liner 604 b, and copper fill region 706 b. Also, within the single substantially vertical trench 202 b, the top and the bottom plates are vertically and horizontally separated by dielectric layer 406 b. Based on the dielectric layer 406 b electrically insulating the top and the bottom plates, structure 800 may function as a capacitor device. However, in some implementation, the dielectric layer 406 b electrically insulating the top and the bottom plates may be designed to breakdown when certain voltage values are applied to the top and the bottom plates. Under such conditions, the top and the bottom plates are electrically coupled through the broken down dielectric layer 406 b. Thus, structure 800 may then function as an anti-fuse device, whereby, under dielectric breakdown conditions, the top and bottom plates are electrically shorted together.

The structure in FIG. 8 may include a capacitance value based on the general capacitor equation, given by:

$\begin{matrix} {C = \frac{ɛ\; A}{d}} & {{Equation}\mspace{14mu} 1} \end{matrix}$

Whereby C is the capacitance value, d is the dielectric thickness separating the capacitor plates, and A is the area of the capacitor plates. Also, ∈ is equivalent to k∈₀, where k is the relative permittivity of the dielectric and ∈₀ is the permittivity of free space (i.e., ∈₀=8.854×10⁻¹² F/m). Equation 1 may be used to determine the capacitance value for structure 800.

As depicted in FIG. 8, two capacitances contribute to the overall capacitance of the capacitor structure 800 formed within trench 202 b. For example, a first capacitance (C1) is formed with respect to the horizontal portion H_(p) of the dielectric layer 406 b located between the opposing sidewall SW_(b) of the trench 202 b, while a second capacitance (C2) is formed with respect to the vertical portion H_(v) of the dielectric layer 406 b located substantially parallel to the opposing sidewall SW_(b) of the trench 202 b. The net capacitance of structure 800 may be accordingly determined to be C=C1+C2, which is the parallel configuration of capacitances C1 and C2.

The first capacitance (C1) formed with respect to the horizontal portion H_(p) of the dielectric layer 406 b may be created between the opposing surfaces of the TaN/Ta metallization liners 402 b, 410 b that are located either side of the horizontal portion H_(p). Here, the capacitor plates are, in part, formed by the surfaces of the TaN/Ta metallization liners 402 b, 410 b that are located either side of the horizontal portion H_(p). Assuming a substantially circular trench shape, the area (A) of each of the capacitor plates may be πR², where R is the radius of the opposing surfaces of TaN/Ta metallization liners 402 b and 410 b located either side of the horizontal portion H_(p). The distance (d) between the plates is governed by the thickness of the dielectric layer 406 b separating the plates. Thus, for a particular dielectric material (e.g., k=2.7), C1 may be calculated using Equation (1).

The second capacitance (C2) formed with respect to the vertical portion H_(v) of the dielectric layer 406 b may be created between the opposing surfaces of the TaN/Ta metallization liners 402 b, 410 b that are located either side of the vertical portion H_(v). Here, one capacitor plate is formed, in part, by the outer surface of a cylinder formed by TaN/Ta metallization liner 410 b. The other capacitor plate is formed, in part, by the inner surface of a cylinder formed by TaN/Ta metallization liner 402 b. Assuming a substantially circular trench shape, the area (A) of each of the cylindrical plates may be approximately given by (2πR)L, where R is the outer radius of the cylindrical plate formed, in part, by TaN/Ta metallization liner 410 b along the vertical portion H_(v). L (as depicted by 805) is the height of the vertical portion H_(v) between the opening O_(t) of the trench 202 b and the upper surface of horizontal portion H_(p) of the dielectric layer 406 b. The distance (d) between the plates is also governed by the thickness of the dielectric layer 406 b separating the plates. Thus, for a particular dielectric material (e.g., k=2.7), C2 may also be calculated using Equation (1).

Based on the structure 800 illustrated in FIG. 8, the following numerical examples are provided. Thus, for R=5 μm, L=10 μm, d=500 Å, and k=2.7, using Equation (1), C1 may be calculated to be about 37.5 fF. As described above, for C1, the plate area A is given by πR². Also, using Equation (1), C2 may be calculated to be about 150 fF. As described above, for C2, the plate area A is given by 27πRL. Accordingly, the total capacitance of structure 800 (i.e., C) is calculated to be 187.5 fF (i.e., C=C1+C2). In another example, using Equation (1), for R=10 μm, L=100 μm, d=100 Å, and k=2.7, C1 may be calculated to be about 751 fF. Also, using Equation (1), C2 may be calculated to be about 15013 fF. Therefore, by reducing the dielectric layer thickness (d) and increasing the area (A) of the top plate of the capacitor, the capacitance may be significantly increased, as illustrated by the above examples.

Referring to FIG. 9, two deep trench capacitor structures 900 a, 900 b having different capacitance values may be formed on separate wafers using the processes described above in relation to FIGS. 1-7. Within a single substantially vertical trench 920 a, the deep trench capacitor 900 a may include a bottom plate formed by TaN/Ta metallization liner 902 a, Cu/Mn liner 904 a, copper fill region 915 a, and TaN/Ta metallization liner 906 a. Within the single substantially vertical trench 920 a, the deep trench capacitor 900 a also includes a top plate formed by TaN/Ta metallization liner 910 a, Cu/Mn liner 918 a, and copper fill region 925 a. Also, within the single substantially vertical trench 920 a, the top and the bottom plates are vertically and horizontally separated by dielectric layer 908 a. Similarly, within another single substantially vertical trench 920 b, the deep trench capacitor 900 b may include a bottom plate formed by TaN/Ta metallization liner 902 b, Cu/Mn liner 904 b, copper fill region 915 b, and TaN/Ta metallization liner 906 b. Within the single substantially vertical trench 920 b, the deep trench capacitor 900 b also includes a top plate formed by TaN/Ta metallization liner 910 b, Cu/Mn liner 918 b, and copper fill region 925 b. Also, within the single substantially vertical trench 920 b, the top and the bottom plates are vertically and horizontally separated by dielectric layer 908 b.

As depicted in FIG. 9, by changing the feature size or sizes of one capacitor compared to the other, their respective capacitance values may be varied. For example, capacitor structure 900 b has a higher capacitance compared to capacitor structure 900 a. In the depicted example, capacitor structure 900 b is formed with a top plate having an increased top plate area (A₁=2πR₁L₁) compared to capacitor structure 900 a. This may be achieved by increasing the depth of the top plate within trench 920 b, as indicated by L₁, relative to trench 920 a, as indicated by L₂.

FIG. 10 depicts an exemplary embodiment of a formed conventional TSV 1000 a structure, and TSV deep trench capacitor structures 1000 b and 1000 c having different capacitance values. Using the processes described above in relation to FIGS. 1-7, in all three structures 1000 a, 1000 b, 1000 c, the TaN/Ta liners 1002 a, 1002 b, 1002 c, the Cu/Mn liners 1004 a, 1004 b, 1004 c, and the copper fill regions 1030 a, 1030 b, 1030 c are formed concurrently. Also, TaN/Ta liners 1006 a, 1006 b, and 1006 c are formed during the formation of the MIM structure within deep trench capacitor structure 1000 c. As depicted, the MIM structure within deep trench capacitor structure 1000 c may include TaN/Ta liner 1006 c, dielectric layer 1022, and TaN/Ta liner 1024. The MIM structure having TaN/Ta liner 1006 c, dielectric layer 1022, and TaN/Ta liner 1024 may be formed by masking structure 1000 c, and etching structures 1000 a and 1000 b in a similar manner to the process described in relation to FIGS. 5A and 5B. Based on this mask and etch process, in structures 1000 a and 1000 b, TaN/Ta liners 1006 a and 1006 b remain.

Subsequently, as further shown in FIG. 10, in all three structures 1000 a, 1000 b, 1000 c, Cu/Mn liners 1026 a, 1026 b, and 1026 c, and copper fill regions 1020 a, 1020 b, and 1020 c are formed concurrently. As further depicted, the MIM structure within deep trench capacitor structure 1000 b may include TaN/Ta liner 1010 b, dielectric layer 1042, and TaN/Ta liner 1044. The MIM structure having TaN/Ta liner 1010 b, dielectric layer 1042, and TaN/Ta liner 1044 may be formed by masking structure 1000 b and etching structures 1000 a and 1000 c in a manner also similar to the process described in relation to FIGS. 5A and 5B. Based on this mask and etch process, in structures 1000 a and 1000 c, TaN/Ta liners 1010 a and 1010 c remain. Copper fill regions 1015 a, 1015 b, and 1015 c are then formed to create TSV structure 1000 a, deep trench capacitor structure 1000 b, and deep trench capacitor 1000 c.

In FIG. 10, deep trench capacitor 1000 c has a higher capacitance value compared to deep trench capacitor 1000 b. This may be due to the increased top plate area of deep trench capacitor 1000 c, which is defined by copper fill 1015 c, TaN/Ta liner 1010 c, Cu/Mn liner 1026 c, copper fill 1020 c, and TaN/Ta liner 1024. The top plate of deep trench capacitor 1000 b may include copper fill 1015 b and TaN/Ta liner 1044. As previously described, the top plate area A may be given by 2πRL, whereby for deep trench capacitor 1000 b the top plate area is 2πR₂L₂, while for deep trench capacitor 1000 c the top plate area is 2πR₁L₁. Since both L₁ and R₁ are greater than L₂ and R₂, the area of the top plate of deep trench capacitor 1000 c is accordingly greater than the area of the top plate of deep trench capacitor 1000 b. Thus, based on Equation (1), the increased top plate area will generate a greater capacitance value.

Accordingly, the embodiment of FIG. 10 illustrates the use of the processes depicted and described in FIGS. 1-7 for the purpose of generating deep trench capacitors of different capacitance values during TSV formation.

Referring to FIG. 11, two deep trench anti-fuse structures 1100 a, 1100 b having different dielectric breakdown thresholds may be formed on different wafers using the processes described above in relation to FIGS. 1-7. Within a single substantially vertical trench 1120 a, the deep trench anti-fuse 1100 a may include a bottom electrical contact formed by TaN/Ta metallization liner 1102 a, Cu/Mn liner 1104 a, copper fill region 1115 a, and TaN/Ta metallization liner 1106 a. Within the single substantially vertical trench 1120 a, the deep trench anti-fuse 1100 a also includes a top electrical contact formed by TaN/Ta metallization liner 1110 a, Cu/Mn liner 1118 a, and copper fill region 1125 a. Also, within the single substantially vertical trench 1120 a, the top and the bottom electrical contacts are vertically and horizontally separated by dielectric layer 1108 a. As an applied voltage across the electrical contacts exceeds the breakdown conditions of the dielectric layer 1108 a, the electrical contacts are shorted together establishing a low resistance connection between the electrical contacts. The voltage at which the anti-fuse 1100 a is activated (i.e., activated short circuit) may be the programming condition.

Still referring to FIG. 11, similarly, within another single substantially vertical trench 1120 b, the deep trench capacitor 1100 b may include a bottom electrical contact formed by TaN/Ta metallization liner 1102 b, Cu/Mn liner 1104 b, copper fill region 1115 b, and TaN/Ta metallization liner 1106 b. Within the single substantially vertical trench 1120 b, the deep trench capacitor 1100 b also includes a top electrical contact formed by TaN/Ta metallization liner 1110 b, Cu/Mn liner 1118 b, and copper fill region 1125 b. Also, within the single substantially vertical trench 1120 b, the top and the bottom electrical contacts are vertically and horizontally separated by dielectric layer 1108 b. As an applied voltage across the electrical contacts exceeds the breakdown conditions of dielectric layer 1108 b, the electrical contacts are shorted together establishing a low resistance connection between the electrical contacts. The voltage at which the anti-fuse 1100 b is activated (i.e., activated short circuit) may be the programming condition.

Further referring to FIG. 11, anti-fuse structure 1100 b may have a low programming condition compared to anti-fuse structure 1100 a. Anti-fuse structure 1100 a may have a high programming condition compared to anti-fuse structure 1100 a. In particular, an electrical short between the contacts of anti-fuse structure 1100 b is established at a lower voltage compared to anti-fuse structure 1100 a. This is caused by anti-fuse structure 1100 b having a relatively larger area dielectric layer 1108 b which is more likely to fail based on an applied voltage (e.g., 25V). Conversely, anti-fuse structure 1100 a having a relatively smaller area dielectric layer 1108 a is less likely to fail based on the same applied voltage (e.g., 25V). In both anti-fuse structures 1100 a and 1100 b, the short may be created by a failure in the dielectric layer along either (e.g., or both) the horizontal portion H′_(p) or the vertical portions H′_(v) of respective dielectric layers 1108 a and 1108 b.

In the above described embodiments, the dielectric layers used for anti-fuse structures may be formed from, for example, oxides (e.g., SiO₂) using a higher temperature (e.g., 400C) atomic layer (ALD) deposition with nitridation. According to other examples, microwave oxide growth at low temperature (e.g., 200C) may also be accomplished. Also, aluminum oxide (Al₂O₃) may be used as a dielectric material. However, the breakdown voltage for Al₂O₃ is higher than SiO₂ and lower than both HfOx and HfSiOx. For example, the dielectric layer used for anti-fuse structures may include a dielectric material having a dielectric constant k-value of less than or about 4.0. The dielectric oxide materials that can be used in the deep trench capacitor structures may include, without limitation, HfOx, ZrO, La₂O₃, Al₂O₃, TiO₂, SrTiO₃, LaAlO₃, Y₂O, HfON, ZrON, La₂ON, Al₂ON₃, TiON, SrTiON, LaAlON, Y₂ON, HfSiOx, HfAlOx, HfSiOxN, HfAlOxN, HfTiLaON, HfTiAlON, HfSiO, HfSiOxN, ZrSiO, ZrSiOxN, and perovskites based high k dielectrics. For example, the dielectric layer for generating capacitor devices may include a high-k dielectric material having a dielectric constant k-value of more than about 7.0.

In some implementation, the choice of dielectric material k value may be selected such that the structures described above function as both a capacitor and fuse under different operating conditions. For example, for low voltage applications across the capacitor plates, the structure may function as a capacitor. However, for high voltage surges across the capacitor plates, the structure may function as an anti-fuse device based on a breakdown of the dielectric material in response to the high voltage.

The above exemplary embodiments describe processes for the creation of devices (e.g., deep trench capacitors and anti-fuses) within TSV based structures during the process of forming conventional TSV structures. It will be appreciated that the materials used to describe the various liners (i.e., Cu/Mn liners, TaN/Ta liners) and fill regions (i.e., copper fill regions) are exemplary and non-limiting. Thus, various other liner material and conductive fill regions may be contemplated using a myriad of know deposition (e.g., CVD, PECVD, SACVD, etc.) and etch (e.g., wet etching, dry RIE etching, etc.) processes.

FIG. 12 shows a block diagram of an exemplary design flow 900 used for example, in semiconductor IC logic design, simulation, test, layout, and manufacture. Design flow 900 includes processes and mechanisms for processing design structures or devices to generate logically or otherwise functionally equivalent representations of the design structure and/or device described above and shown in FIGS. 7-11. The design structure processed and/or generated by design flow 900 may be encoded on machine-readable transmission or storage media to include data and/or instructions that when executed or otherwise processed on a data processing system generate a logically, structurally, mechanically, or otherwise functionally equivalent representation of hardware components, circuits, devices, or systems.

Design flow 900 may vary depending on the type of representation being designed. For example, a design flow 900 for building an application specific IC (ASIC) may differ from a design flow 900 for designing a standard component or from a design flow 900 for instantiating the design into a programmable array, for example a programmable gate array (PGA) or a field programmable gate array (FPGA) offered by Altera® Inc. or Xilinx® Inc.

FIG. 12 illustrates multiple such design structures including an input design structure 920 that is preferably processed by a design process 910. In one embodiment, the design structure 920 comprises design data used in a design process and comprising information describing the embodiments of the invention with respect to the structures as shown in FIGS. 7-11. The design data in the form of schematics or HDL, a hardware-description language (e.g., Verilog, VHDL, C, etc.) may be embodied on one or more machine readable media. For example, design structure 920 may be a text file, numerical data or a graphical representation of the embodiments of the invention, as shown in FIGS. 7-11. Design structure 920 may be a logical simulation design structure generated and processed by design process 910 to produce a logically equivalent functional representation of a hardware device. Design structure 920 may also or alternatively comprise data and/or program instructions that when processed by design process 910, generate a functional representation of the physical structure of a hardware device. Whether representing functional and/or structural design features, design structure 920 may be generated using electronic computer-aided design (ECAD) such as implemented by a core developer/designer. When encoded on a machine-readable data transmission, gate array, or storage medium, design structure 920 may be accessed and processed by one or more hardware and/or software modules within design process 910 to simulate or otherwise functionally represent an electronic component, circuit, electronic or logic module, apparatus, device, or system such as those shown in FIGS. 7-11. As such, design structure 920 may comprise files or other data structures including human and/or machine-readable source code, compiled structures, and computer-executable code structures that when processed by a design or simulation data processing system, functionally simulate or otherwise represent circuits or other levels of hardware logic design. Such data structures may include hardware-description language (HDL) design entities or other data structures conforming to and/or compatible with lower-level HDL design languages such as Verilog and VHDL, and/or higher level design languages such as C or C++.

Design process 910 preferably employs and incorporates hardware and/or software modules for synthesizing, translating, or otherwise processing a design/simulation functional equivalent of the components, circuits, devices, or logic structures shown in FIGS. 7-11 to generate a netlist 980 which may contain a design structure such as design structure 920. Netlist 980 may comprise, for example, compiled or otherwise processed data structures representing a list of wires, discrete components, logic gates, control circuits, I/O devices, models, etc. that describes the connections to other elements and circuits in an integrated circuit design. Netlist 980 may be synthesized using an iterative process in which netlist 980 is resynthesized one or more times depending on design specifications and parameters for the device. As with other design structure types described herein, netlist 980 may be recorded on a machine-readable data storage medium or programmed into a programmable gate array. The medium may be a non-volatile storage medium such as a magnetic or optical disk drive, a programmable gate array, a compact flash, or other flash memory. Additionally, or in the alternative, the medium may be a system or cache memory, buffer space, or electrically or optically conductive devices and materials on which data packets may be transmitted and intermediately stored via the Internet, or other networking suitable means.

Design process 910 may include hardware and software modules for processing a variety of input data structure types including netlist 980. Such data structure types may reside, for example, within library elements 930 and include a set of commonly used elements, circuits, and devices, including models, layouts, and symbolic representations, for a given manufacturing technology (e.g., different technology nodes, 32 nm, 45 nm, 90 nm, etc.). The data structure types may further include design specifications 940, characterization data 950, verification data 960, design rules 970, and test data files 985 which may include input test patterns, output test results, and other testing information. Design process 910 may further include, for example, standard mechanical design processes such as stress analysis, thermal analysis, mechanical event simulation, process simulation for operations such as casting, molding, and die press forming, etc. One of ordinary skill in the art of mechanical design can appreciate the extent of possible mechanical design tools and applications used in design process 910 without deviating from the scope and spirit of the invention. Design process 910 may also include modules for performing standard circuit design processes such as timing analysis, verification, design rule checking, place and route operations, etc.

Design process 910 employs and incorporates logic and physical design tools such as HDL compilers and simulation model build tools to process design structure 920 together with some or all of the depicted supporting data structures along with any additional mechanical design or data (if applicable), to generate a second design structure 990 comprising second design data embodied on a storage medium in a data format used for the exchange of layout data of integrated circuits and/or symbolic data format (e.g. information stored in a GDSII (GDS2), GL1, OASIS, map files, or any other suitable format for storing such design structures). In one embodiment, the second design data resides on a storage medium or programmable gate array in a data format used for the exchange of data of mechanical devices and structures (e.g. information stored in a IGES, DXF, Parasolid XT, JT, DRG, or any other suitable format for storing or rendering such mechanical design structures). Similar to design structure 920, design structure 990 preferably comprises one or more files, data structures, or other computer-encoded data or instructions that reside on transmission or data storage media and that when processed by an ECAD system generate a logically or otherwise functionally equivalent form of the embodiments of the invention shown in FIGS. 7-11. In one embodiment, design structure 990 may comprise a compiled, executable HDL simulation model that functionally simulates the device structures shown in FIGS. 7-11.

Design structure 990 may also employ a data format used for the exchange of layout data of integrated circuits and/or symbolic data format (e.g. information stored in a GDSII (GDS2), GL1, OASIS, map files, or any other suitable format for storing such design data structures).

Design structure 990 may comprise information such as, for example, symbolic data, map files, test data files, design content files, manufacturing data, layout parameters, wires, levels of metal, vias, shapes, data for routing through the manufacturing line, and any other data required by a manufacturer or other designer/developer to produce devices or structures as described above and shown in FIGS. 7-11. Design structure 990 may then proceed to a stage 995 where, for example, design structure 990: proceeds to tape-out, is released to manufacturing, is released to a mask house, is sent to another design house, is sent back to the customer, etc.

The descriptions of the various embodiments of the present invention have been presented for purposes of illustration, but are not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the one or more embodiment, the practical application or technical improvement over technologies found in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein. 

What is claimed is:
 1. A through-silicon-via (TSV) structure formed within a trench located within a semiconductor structure, the TSV structure comprising: a first electrically conductive liner layer located within the trench and extending along a vertical length of a side wall of the trench, the first electrically conductive liner layer including substantially u-shaped structure such that a bottom surface of the substantially u-shaped structure is co-planar with a bottom surface of the semiconductor structure and exposed through the bottom surface of the semiconductor structure; a first electrically conductive structure located on the first electrically conductive liner layer, the first electrically conductive structure partially filling the trench; a second electrically conductive liner layer located on the first electrically conductive structure; a dielectric layer located on the second electrically conductive liner layer; a third electrically conductive liner layer located on the dielectric layer; and a second electrically conductive structure located on the third electrically conductive liner layer and filling a remaining opening of the trench.
 2. The TSV structure of claim 1, wherein the first electrically conductive structure comprises a copper seed layer and an electroplated copper region.
 3. The TSV structure of claim 2, wherein the copper seed layer includes manganese (Mn).
 4. The TSV structure of claim 1, wherein the first electrically conductive structure and the first electrically conductive liner layer and the second electrically conductive liner layer comprise a first capacitor electrode of a capacitor device.
 5. The TSV structure of claim 4, wherein the second electrically conductive structure and the third electrically conductive liner layer comprise a second capacitor electrode of the capacitor device.
 6. The TSV structure of claim 5, wherein the capacitor device comprises: a first capacitance created between the first capacitor electrode and the second capacitor electrode and a first portion of the dielectric layer located substantially vertically along the side wall of the trench; and a second capacitance created between the first capacitor electrode and the second capacitor electrode and a second portion of the dielectric layer located substantially horizontally between the side wall of the trench.
 7. The TSV structure of claim 5, wherein the dielectric layer comprises a high-k film.
 8. The TSV structure of claim 7, wherein the high-k film comprises a thickness of about 100 Å to about 1000 Å.
 9. The TSV structure of claim 5, wherein the first capacitor electrode and the second capacitor electrode are each of substantially circular shape.
 10. The TSV structure of claim 1, wherein the trench comprises a depth of about 5 μm to about 100 μm relative to a top opening of the trench, and wherein the trench comprises a diameter of about 2-20 μm.
 11. The TSV structure of claim 1, wherein the first, the second, and the third electrically conductive liner layer each comprise a tantalum nitride (TaN) layer and tantalum (Ta) layer.
 12. The TSV structure of claim 1, wherein the first electrically conductive structure comprises a first volume of electrically conductive material within the trench, and the second electrically conductive structure comprises a second volume of electrically conductive material within the trench, the ratio of the first volume of electrically conductive material with respect to the second volume of electrically conductive material determining a capacitance value between the first electrically conductive structure and the second electrically conductive structure.
 13. The TSV structure of claim 12, wherein the first volume of electrically conductive material and the second volume of electrically conductive material comprise a copper (Cu) material having manganese (Mn).
 14. The TSV structure of claim 1, wherein the second electrically conductive structure comprises a copper seed layer having manganese and an electroplated copper region.
 15. The TSV structure of claim 1, wherein the trench is of substantially circular shape. 